| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110
Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp.
Atmel, Corp.
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MT29F128G08AMAAA MT29F128G08AJAAA MT29F256G08AUAAA |
NAND Flash Memory
|
Micron
|
| MT29F4G08ABBEAH4 MT29F4G16ABBEAH4 MT29F4G08ABAEAH4 |
NAND Flash Memory
|
Micron
|
| MT29F1G16ABCHC MT29F1G08ABCH4 |
NAND Flash Memory
|
Micron Technology
|
| K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MT29F2G16ABBEAH4 MT29F2G08ABBEAHC MT29F2G08ABAEAH4 |
2Gb NAND Flash Memory
|
Micron
|
| ML54053 |
NAND Flash Memory Controller
|
OKI electronic componets
|
